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Silicon wafers

Silicon wafers

Silicon wafers are cut from Silicon single crystal using internal diameter diamond discs. They are used for production of silicon substrates and membranes.
The below mentioned parameters are dealing with our standard products.
On the customer's request we are ready to discuss orders for wafers with some other parameters. All of our silicon wafers are delivered with certificate of analysis. 

Direct link to the wafers tweezers page : tweezers

Our Silicon wafers

Main specifications for our wafers in stock:

  • Orientation : <100>
  • Growth method : CZ and FZ
  • Resistivity: from 0.001 to > 20 000 Ω.cm 
  • With flats
  • Packaging : 25 pieces/box

We can offer wafers with some other parameters. Please fill in the table "Our customized products", with your specifications.

P/N Ø Thick. (µm) Type / Dopant polish. sides Res. (Ω.cm) Ra (nm)
WAK2NFR 2" 300 n-As 1 0.001-0.005 < 4
WAFERS2-NFR 2" 300 n-As 1 0.001-0.005 < 0.5
WAS2 2" 280 n-P 1 1-10 < 1
WAFERS2-2FP 2" 280 n-P 2 1-20 < 0.5
WAK2PN2FP 2" 280 n-P 2 1-20 <4
WAK2PN 2" 280 n-P 1 1-20 < 4
WAS2PIR 2" (FZ) 280 n-P 2 > 100 < 0.5
WAK2PFR 2" 275 p-B 1 0.03-0.05 < 4
WAK2PHR 2" (FZ) 300 p-B 1 4000 <4
WAK2PP 2" 280 p-B 1 1-20 < 4
WAK2PP-2FP 2" 280 p-B 2 1-20 < 4
WAP2FZ 2" (FZ) 280 intrinsic 1 > 20 000 < 0.5
WAP2F-2FP 2" (FZ) 280 intrinsic 2 > 20 000 < 0.5
WAK3PP 3" 380 p-B 1 5-10 <4
WAS3N40+ 3" 380 p-B 1 Indifferent < 1
WAK3PN 3" 380 n-P 1 1-20 < 4
WAK3PN-2FP 3" 1000 n-P 2 Indifferent < 4
WAK4NFR 4" 500 n-As 1 <0.005 < 4
WAS4P510 4" 525 n-P 1 5-10 < 0.5
WAFERS4P-2FP 4" 525 n-P 2 1-20 < 0.5
WAK4PN 4" 525 n-P 1 1-20 < 4
WAS4P1020 4" 525 n-P 1 10-20 < 0.5
WAS4PIR 4" (FZ) 525 n-P 2 > 100 < 0.5
WAK4PFR 4" 525 p-B 1 0.01-0.02 < 4
WAK4PP 4" 525 p-B 1 1-20 < 4
WAP4FZ 4" (FZ) 525 intrinsic 1 > 20 000 < 0.5
WAP4FZ-2FP 4" (FZ) 525 intrinsic 2 > 20 000 < 0.5
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Thermal oxidation

We offer a service of thermal oxidation (by dry or wet way) on our wafers (or on your wafers). The oxidation thickness can be from 50 nm to 5 µm. The oxidation on one side is also possible.

Process
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Silicon nitride Si3N4 layers

We offer a service of silicon nitride Si3N4 (classical at 800°C or low stress at 835°C) of our wafers (or your wafers).

Thickness: from 50 nm to 1 µm.

Treatment
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Thickness
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Vacuum coatings on wafers and silicon substrates

 

We offer special vacuum coatings (Ag, Al, Au, Cu, Pt, ...) on wafers by PVD (sputtering or vacuum evaporation). We can deposit a precoating layer (Cr or Ti) if necessary.

We can also offer multi-layers deposition.

Treatment
Wafers Si diameter
Layer and thickness
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Dicing of wafers and substrates silicon

We offer the dicing of the wafers in square or rectangular parts.

Examples:

  • 10 mm x 10 mm
  • 5 mm x 5 mm
  • 5 mm x 10 mm, ...

If you want an offer, or for more information about this product: Contact us

Contact us

Single Silicon wafer and susbstrate container

Single Silicon wafer and susbstrate container

Single Silicon wafer carrier, or for other delicate flat substrates, from 1" to 6".

Material : natural PP

Couleur : Transparent

Packaging :

  • 1 pce
  • per 25 clean room bagged
P/N Wafer dimension Packaging
BWA1S 1" 1
BWA15 1.5" 1
BWA2S 2" 1
BWA25 2.5" 1
BWA3S 3" 1
BWA4S 4" 1
BWA5 5" 1
BWA6S 6" 1
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